Infineon’s 800-V CoolMOS P7 series offers up to 0.6% efficiency gain, which translates into a 2°C to 8°C lower MOSFET temperature compared to CoolMOS C3 and competitive parts tested in typical flyback applications. Based on superjunction technology, the devices are a good fit for low-power SMPS applications and focus on flyback topologies typically found in adapters, LED lighting, audio, industrial, and auxiliary power designs.
Optimized device parameters include a reduction of more than 50% in EOSS and Qg, as well as reduced Ciss and Coss. Improved performance enables designs with higher power density through lower switching losses and better DPAK on-resistance. An integrated zener diode improves ESD ruggedness, reducing ESD-related production yield losses. Parts have a gate threshold voltage of 3V with a V(GS)th variation of only ±0.5 V.
The 800-V CoolMOS P7 family offers a choice of 12 on-resistance classes and 6 package types. MOSFETs with on-resistance ratings of 280 mΩ, 450 mΩ, 1400 mΩ, and 4500 mΩ are available now.